Group III nitride semiconductor with InGaN diffusion blocking layer

Invention Grant

US10886435B2 Group III nitride semiconductor with InGaN diffusion blocking layer 有权

Patent Title: Group III nitride semiconductor with InGaN diffusion blocking layer
Application No.: US16469106

Application Date: 2018-10-23
Publication No.: US10886435B2

Publication Date: 2021-01-05
Inventor: Akihiko Ishibashi , Akio Ueta , Hiroshi Ohno
Applicant: PANASONIC CORPORATION
Applicant Address: JP Osaka
Assignee: PANASONIC CORPORATION
Current Assignee: PANASONIC CORPORATION
Current Assignee Address: JP Osaka
Agency: McDermott Will & Emery LLP
Priority: JP2017-220749 20171116
International Application: PCT/JP2018/039367 WO 20181023
International Announcement: WO2019/097963 WO 20190523
Main IPC: H01L33/32
IPC: H01L33/32 ; H01L33/02

Abstract:

To provide a high-quality group III nitride semiconductor. A group III nitride semiconductor including an n-GaN layer composed of AlxGa1-xN (0≤x

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L33/00	至少有一个电位跃变势垒或表面势垒的专门适用于光发射的半导体器件；专门适用于制造或处理这些半导体器件或其部件的方法或设备；这些半导体器件的零部件（H01L51/00优先；由在一个公共衬底中或其上形成有多个半导体组件并包括具有至少一个电位跃变势垒或表面势垒，专门适用于光发射的器件入H01L27/15；半导体激光器入H01S5/00）
H01L33/02	.以半导体为特征的
H01L33/26	..发光区的材料
H01L33/30	...只包括周期体系中的III族和V族的元素
H01L33/32	....含氮