Invention Grant
- Patent Title: Thermoelectric material, method of fabricating the same, and thermoelectric device
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Application No.: US15536268Application Date: 2017-03-09
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Publication No.: US10886451B2Publication Date: 2021-01-05
- Inventor: Mann Ho Cho , Hye Jin Choi , Ji Min Chae , Han Bum Park
- Applicant: UNIVERSITY-INDUSTRY FOUNDATION (UIF), YONSEI UNIVERSITY
- Applicant Address: KR Seoul
- Assignee: UNIVERSITY-INDUSTRY FOUNDATION (UIF), YONSEI UNIVERSITY
- Current Assignee: UNIVERSITY-INDUSTRY FOUNDATION (UIF), YONSEI UNIVERSITY
- Current Assignee Address: KR Seoul
- Priority: KR10-2016-0052070 20160428
- International Application: PCT/KR2017/002557 WO 20170309
- International Announcement: WO2017/188590 WO 20171102
- Main IPC: H01L35/26
- IPC: H01L35/26 ; H01L35/16 ; H01L35/34 ; H01L35/32 ; H01L27/16 ; H01L35/00 ; H01L21/06 ; H01L35/18 ; H01L35/02 ; H01L35/12
Abstract:
Provided are a thermoelectric material, a method of fabricating the same, and a thermoelectric device. The thermoelectric material includes a first material layer including a chalcogen element; and a second material layer including a reaction compound between the chalcogen element and a metal element, wherein the thermoelectric material has a structure in which the first material layer is inserted in the second material layer.
Public/Granted literature
- US20190035995A1 THERMOELECTRIC MATERIAL, METHOD OF FABRICATING THE SAME, AND THERMOELECTRIC DEVICE Public/Granted day:2019-01-31
Information query
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