Invention Grant
- Patent Title: Magnetic tunnel junction device with spin-filter structure
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Application No.: US16834664Application Date: 2020-03-30
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Publication No.: US10886460B2Publication Date: 2021-01-05
- Inventor: Young Keun Kim , Kyung-Jin Lee , Gyungchoon Go
- Applicant: Korea University Research and Business Foundation
- Applicant Address: KR Seoul
- Assignee: Korea University Research and Business Foundation
- Current Assignee: Korea University Research and Business Foundation
- Current Assignee Address: KR Seoul
- Agency: Jenkins, Wilson, Taylor & Hunt, P.A.
- Priority: KR10-2017-0000532 20170103
- Main IPC: H01L27/22
- IPC: H01L27/22 ; H01L43/08 ; G11C11/18 ; G11C11/16 ; H01L43/02 ; H01L43/04 ; H01L43/06 ; H01L43/10

Abstract:
A magnetic device includes: a conductive layer into which current is injected in a first direction, the conductive layer causing spin Hall effect or Rashba effect; a ferromagnetic layer disposed in contact with the conductive layer such that the ferromagnetic layer and the conductive layer are stacked on each other, a magnetization direction of the ferromagnetic layer being switched; and a spin filter structure having a fixed magnetization direction, the spin filter structure being disposed on at least one of the opposite side surfaces of the first direction of the conductive layer to inject spin-polarized current into the conductive layer.
Public/Granted literature
- US20200227630A1 MAGNETIC TUNNEL JUNCTION DEVICE WITH SPIN-FILTER STRUCTURE Public/Granted day:2020-07-16
Information query
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