Invention Grant
- Patent Title: Method of fabricating a magnetoresistive bit from a magnetoresistive stack
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Application No.: US16881151Application Date: 2020-05-22
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Publication No.: US10886463B2Publication Date: 2021-01-05
- Inventor: Kerry Joseph Nagel , Sanjeev Aggarwal , Sarin A. Deshpande
- Applicant: Everspin Technologies, Inc.
- Applicant Address: US AZ Chandler
- Assignee: Everspin Technologies, Inc.
- Current Assignee: Everspin Technologies, Inc.
- Current Assignee Address: US AZ Chandler
- Agency: Bookoff McAndrews, PLLC
- Main IPC: H01L43/12
- IPC: H01L43/12 ; H01L43/08 ; H01L43/10 ; H01L43/02 ; G11C11/16

Abstract:
A method of fabricating a magnetoresistive bit from a magnetoresistive stack includes (a) etching through at least a portion of a thickness of the surface region to create a first set of exposed areas in the form of multiple strips extending in a first direction, and (b) etching through at least a portion of a thickness of the surface region to create a second set of exposed areas in the form of multiple strips extending in a second direction. The first set of exposed areas and the second set of exposed areas may have multiple areas that overlap. The method may also include, (c) after the etching in (a) and (b), etching through at least a portion of the thickness of the magnetoresistive stack through the first set and second set of exposed areas.
Public/Granted literature
- US20200287128A1 METHOD OF FABRICATING A MAGNETORESISTIVE BIT FROM A MAGNETORESISTIVE STACK Public/Granted day:2020-09-10
Information query
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