Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16544363Application Date: 2019-08-19
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Publication No.: US10886695B2Publication Date: 2021-01-05
- Inventor: Kazuaki Tsuchiyama , Motoo Suwa , Hidemasa Takahashi
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2018-170389 20180912
- Main IPC: H01S5/00
- IPC: H01S5/00 ; H01S5/022 ; H01S5/042
Abstract:
Improve semiconductor device performance. The wiring WL1A on which the semiconductor chip CHP1 in which the semiconductor lasers LD is formed is mounted has a stub STB2 in the vicinity of the mounting area of the semiconductor chip CHP1.
Public/Granted literature
- US20200083663A1 SEMICONDUCTOR DEVICE Public/Granted day:2020-03-12
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