Invention Grant
- Patent Title: Reverse direction high-electron-mobility transistor circuit
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Application No.: US16246397Application Date: 2019-01-11
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Publication No.: US10886732B2Publication Date: 2021-01-05
- Inventor: David L. Whitney , Manuel M. Del Arroz
- Applicant: David L. Whitney , Manuel M. Del Arroz
- Applicant Address: US CA Saratoga; US CA Diablo
- Assignee: David L. Whitney,Manuel M. Del Arroz
- Current Assignee: David L. Whitney,Manuel M. Del Arroz
- Current Assignee Address: US CA Saratoga; US CA Diablo
- Agent Douglas L. Weller
- Main IPC: H02H9/00
- IPC: H02H9/00 ; H02H9/04 ; H01L27/02 ; H03K19/094 ; H03K19/20 ; H01L27/06 ; H01L49/02 ; H01L29/20 ; H01L29/778 ; H01L29/205

Abstract:
A circuit includes an output and a reverse direction high-electron-mobility transistor. The reverse direction high-electron-mobility transistor includes a drain connected to the output. The reverse direction high-electron-mobility transistor also includes a source and a gate. A transistor includes a source, a gate connected to a control pin and a drain connected to the gate of the reverse direction high-electron-mobility transistor.
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