Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16000095Application Date: 2018-06-05
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Publication No.: US10886862B2Publication Date: 2021-01-05
- Inventor: Nobutaka Okumura
- Applicant: JTEKT CORPORATION
- Applicant Address: JP Osaka
- Assignee: JTEKT CORPORATION
- Current Assignee: JTEKT CORPORATION
- Current Assignee Address: JP Osaka
- Agency: Oliff PLC
- Priority: JP2017-117719 20170615
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H02P6/10 ; H03K17/16 ; H02M7/00 ; H05K1/02 ; H01L23/48 ; H02M7/5387 ; B62D5/04

Abstract:
A third upper MOS and a third motor relay are disposed on a front surface of a substrate. A third shunt resistor and a third lower MOS are disposed on a back surface of the substrate. The substrate has a via electrically connecting interconnects. Thus, a source electrode of the third upper MOS and a drain electrode of the third motor relay are electrically connected to a source electrode of the third lower MOS by the via.
Public/Granted literature
- US20180367071A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-12-20
Information query
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