- Patent Title: Composite substrate for surface acoustic wave device, method of producing composite substrate for surface acoustic wave device, and surface acoustic wave device using composite substrate
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Application No.: US16319016Application Date: 2017-07-04
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Publication No.: US10886890B2Publication Date: 2021-01-05
- Inventor: Shoji Akiyama , Masayuki Tanno , Shozo Shirai
- Applicant: SHIN-ETSU CHEMICAL CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: SHIN-ETSU CHEMICAL CO., LTD.
- Current Assignee: SHIN-ETSU CHEMICAL CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Greenblum & Bernstein, P.L.C.
- Priority: JP2016-142219 20160720,JP2016-198110 20161006,JP2017-089665 20170428
- International Application: PCT/JP2017/024490 WO 20170704
- International Announcement: WO2018/016314 WO 20180125
- Main IPC: H03H9/02
- IPC: H03H9/02 ; H03H3/08 ; H03H9/25

Abstract:
Provided is a high-performance composite substrate for surface acoustic wave device which has good temperature characteristics and in which spurious caused by the reflection of a wave on a joined interface between a piezoelectric crystal film and a support substrate is reduced. The composite substrate for surface acoustic wave device includes: a piezoelectric single crystal substrate; and a support substrate, where, at a portion of a joined interface between the piezoelectric single crystal substrate and the support substrate, at least one of the piezoelectric single crystal substrate and the support substrate has an uneven structure, a ratio of an average length RSm of elements in a cross-sectional curve of the uneven structure to a wavelength λ of a surface acoustic wave when the substrate is used as a surface acoustic wave device is equal to or more than 0.2 and equal to or less than 7.0.
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