The present disclosure provides a gate circuit and a gate drive circuit for a power semiconductor switch, including: a zener diode and a charge dissipation circuit. A first end of the zener diode is connected to a first end of the charge dissipation circuit and a gate of the power semiconductor switch, a second end of the zener diode is connected to a second end of the charge dissipation circuit and a second end of the power semiconductor switch. A first parasitic capacitor is formed between a first end and the gate of the power semiconductor switch, and a second parasitic capacitor is formed between the gate and the second end of the power semiconductor switch.