Embodiments disclosed herein include an abatement system and method for abating compounds produced in semiconductor processes. The abatement system includes a remote plasma source for generating an oxidizing plasma for treating exhaust gases from a deposition process performed in the processing chamber, the treatment assisting with the trapping particles in an exhaust cooling apparatus. The remote plasma source then generates a cleaning plasma for treating exhaust gases from a cleaning process performed in the processing chamber, the cleaning plasma reacting with the trapped particles in the exhaust cooling apparatus and cleaning the exhaust cooling apparatus.