Invention Grant
- Patent Title: Bandgap current architecture optimized for size and accuracy
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Application No.: US16282847Application Date: 2019-02-22
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Publication No.: US10890935B2Publication Date: 2021-01-12
- Inventor: Guillaume Mouret , Yann Cargouet , Thierry Sicard
- Applicant: NXP USA, Inc.
- Applicant Address: US TX Austin
- Assignee: NXP USA, Inc.
- Current Assignee: NXP USA, Inc.
- Current Assignee Address: US TX Austin
- Priority: EP19305073 20190121
- Main IPC: G05F1/46
- IPC: G05F1/46 ; G05F3/26

Abstract:
A low voltage bandgap reference circuit (200) is provided which includes a first current generator (202) having first and second circuit branches which include, respectively, first and second bipolar transistors having different sizing reference values for generating a first current at a first resistor that varies proportionally as a function of temperature; a second current generator (204, 205) having a third circuit branch which includes one or more field effect transistors and no bipolar transistors for generating a second current that varies inversely as a function of temperature; and a third circuit (206) connected to generate a bandgap reference current in response to the first current and the second current.
Public/Granted literature
- US20200233445A1 Bandgap Current Architecture Optimized for Size and Accuracy Public/Granted day:2020-07-23
Information query
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