Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16375580Application Date: 2019-04-04
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Publication No.: US10891986B2Publication Date: 2021-01-12
- Inventor: Tetsuo Fukushi , Hiroyuki Takahashi
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2018-084187 20180425
- Main IPC: G11C5/06
- IPC: G11C5/06 ; G11C7/10 ; G11C8/06 ; G11C7/06

Abstract:
The subject in the past is that there are a large number of data wirings in a semiconductor device including multiple memory cell arrays and that the area occupied by the data wirings is large. In a selected memory cell array among multiple memory cell arrays, a data wiring functions as a local wiring that transmits the data of the selected memory cell. In a memory cell array that is not selected among the memory cell arrays and is located between a data circuit and the selected memory cell array, the data wiring functions as a global wiring that transmits the data of a memory cell of the selected memory cell array.
Public/Granted literature
- US20190333546A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-10-31
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