- Patent Title: Semiconductor device and method for forming a semiconductor device
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Application No.: US16222592Application Date: 2018-12-17
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Publication No.: US10892168B2Publication Date: 2021-01-12
- Inventor: Gerhard Schmidt , Mario Barusic , Benedikt Stoib
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homilier, PLLC
- Priority: DE102017130355 20171218
- Main IPC: H01L21/322
- IPC: H01L21/322 ; H01L27/06 ; H01L29/32 ; H01L29/739 ; H01L29/66 ; H01L29/861 ; H01L29/167 ; H01L29/207 ; H01L29/36 ; H01L21/265 ; H01L49/02
Abstract:
A method for forming a semiconductor device includes incorporating recombination center atoms into a semiconductor substrate. The method further includes, after incorporating the recombination center atoms into the semiconductor substrate, implanting noble gas atoms into a doping region of a diode structure and/or a transistor structure, the doping region being arranged at a surface of the semiconductor substrate.
Public/Granted literature
- US20190189463A1 Semiconductor Device and Method for Forming a Semiconductor Device Public/Granted day:2019-06-20
Information query
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