Invention Grant
- Patent Title: Semiconductor device including a blocking pattern in an interconnection line
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Application No.: US16511019Application Date: 2019-07-15
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Publication No.: US10892185B2Publication Date: 2021-01-12
- Inventor: Sangjun Park , Haewang Lee , Jaemyung Choi
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Lee IP Law, P.C.
- Priority: KR10-2018-0115947 20180928
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/522 ; H01L23/532 ; H01L23/528

Abstract:
A semiconductor device including a first interconnection line having a first end and extending in a first direction; a first blocking pattern at the first end of the first interconnection line and adjacent to the first interconnection line in the first direction; a second interconnection line spaced apart from the first interconnection line in a second direction crossing the first direction and extending in the first direction, the second interconnection line having a second end; and a second blocking pattern at the second end of the second interconnection line and adjacent to the second interconnection line in the first direction, wherein a width of the first blocking pattern in the first direction is different from a width of the second blocking pattern in the first direction.
Information query
IPC分类: