Invention Grant
- Patent Title: Method of manufacturing conductive feature and method of manufacturing package
-
Application No.: US16416294Application Date: 2019-05-20
-
Publication No.: US10892228B2Publication Date: 2021-01-12
- Inventor: Hui-Jung Tsai , Hung-Jui Kuo , Yun-Chen Hsieh
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/538 ; H01L23/498 ; H01L23/00 ; H01L25/00 ; H01L21/48 ; H01L21/56 ; H01L23/31 ; H01L25/10

Abstract:
Methods of manufacturing a conductive feature and a package are provided. One of the methods includes the following steps. A seed layer is formed. A conductive pattern is formed over the seed layer. The seed layer and the conductive pattern include a same material. A dry etch process is performed to partially remove the seed layer exposed by the conductive pattern, to form a seed layer pattern. A plasma treatment process is performed on the seed layer pattern and the conductive pattern thereon, wherein the step of partially removing the seed layer and the step of performing the plasma treatment process are in-situ processes.
Public/Granted literature
- US20190273045A1 METHODS OF MANUFACTURING CONDUCTIVE FEATURE AND METHOD OF MANUFACTURING PACKAGE Public/Granted day:2019-09-05
Information query
IPC分类: