Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16559409Application Date: 2019-09-03
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Publication No.: US10892251B2Publication Date: 2021-01-12
- Inventor: Satoshi Tsukiyama , Hideo Aoki
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JP2019-051999 20190319
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L23/00 ; H01L23/31
Abstract:
According to one embodiment, a semiconductor device includes a wiring board, a controller chip that is provided on the wiring board and is sealed with a first resin composition, a nonvolatile memory chip that is provided on the first resin composition and is sealed with a second resin composition, a second bonding wire that connects a pad for electric power supply wiring of the controller chip to the wiring board and is sealed with the first resin composition, and a first bonding wire that connects a pad for signal wiring of the controller chip to the wiring board, is sealed with the first resin composition, and has a higher Pd content than that of the second bonding wire.
Public/Granted literature
- US20200303346A1 SEMICONDUCTOR DEVICE Public/Granted day:2020-09-24
Information query
IPC分类:
