- Patent Title: Semiconductor device manufacturing method and semiconductor device
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Application No.: US16114225Application Date: 2018-08-28
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Publication No.: US10892253B2Publication Date: 2021-01-12
- Inventor: Shun Ikenouchi
- Applicant: FUJI ELECTRIC CO.,LTD.
- Applicant Address: JP Kanagawa
- Assignee: FUJI ELECTRIC CO.,LTD.
- Current Assignee: FUJI ELECTRIC CO.,LTD.
- Current Assignee Address: JP Kanagawa
- Priority: JP2016-176834 20160909
- Main IPC: H01L25/07
- IPC: H01L25/07 ; H01L23/31 ; H01L23/00 ; H01L25/18

Abstract:
To provide a semiconductor device 100 including a semiconductor element with a less warped chip. A semiconductor device manufacturing method include: bonding a rear surface of a chip having electrodes on both sides thereof to a front surface of a substrate; providing, to the front surface of the substrate to which the chip is bonded, a plating protective film having an opening at a position which is on the front surface of the chip and corresponds to an electrode at which plating is to be formed, after the bonding; plating the electrode of the chip after the providing; and removing the plating protective film from the substrate, after the plating.
Public/Granted literature
- US20180366449A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE Public/Granted day:2018-12-20
Information query
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