A semiconductor memory device of an embodiment includes a stacked body having a stepped portion in which a plurality of metal layers is stacked via an insulating layer, and end portions of the plurality of metal layers are formed in a stepwise manner, a plurality of columnar portions arranged in steps of the stepped portion and penetrating the stepped portion, and a band portion provided near a leading end portion of the metal layer of a lowermost step of the stepped portion, the band portion extending in a first direction along the leading end portion and dividing the stacked body and a peripheral region of the stacked body, in which a coverage of the columnar portions arranged in the lowermost step is larger than a coverage of the columnar portions arranged in an upper step adjacent to the lowermost step only in a second direction toward a region where memory cells are arranged.