[Object] To provide a semiconductor device which can achieve not only satisfactory switching characteristics in both a small current region and a large current region but also a satisfactory reverse withstand voltage.
[Solution Means] A semiconductor device is provided that includes a semiconductor layer having a front surface, a back surface on a side opposite thereto, and an end surface, an MIS transistor structure which is formed on a front surface portion of the semiconductor layer, a first conductivity type portion and a second conductivity type portion which are formed adjacent to each other on the side of the back surface of the semiconductor layer, and a first electrode which is formed on the back surface of the semiconductor layer, which forms a Schottky junction with the first conductivity type portion and which is in ohmic contact with the second conductivity type portion.