Invention Grant
- Patent Title: MOS transistors in parallel
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Application No.: US16059654Application Date: 2018-08-09
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Publication No.: US10892321B2Publication Date: 2021-01-12
- Inventor: François Tailliet
- Applicant: STMicroelectronics (Rousset) SAS
- Applicant Address: FR Rousset
- Assignee: STMicroelectronics (Rousset) SAS
- Current Assignee: STMicroelectronics (Rousset) SAS
- Current Assignee Address: FR Rousset
- Agency: Slater Matsil, LLP
- Priority: FR1757701 20170816
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/06 ; H01L27/088 ; H01L21/762 ; H01L29/10 ; H01L29/78 ; H01L21/8234

Abstract:
An electronic chip includes first transistors connected in parallel so that gates of the first transistors are interconnected, drain areas of the first transistors are interconnected, and source areas of the first transistors are interconnected. The first transistors are separated from one another by first isolating trenches. The chip also includes second transistors and second isolating trenches. The second transistors are separated from one another by the second isolating trenches. The first isolating trenches have a maximum width that is smaller than a maximum width of all the second isolating trenches.
Public/Granted literature
- US20190058034A1 MOS TRANSISTORS IN PARALLEL Public/Granted day:2019-02-21
Information query
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