- Patent Title: Flash memory with assistant gate and method of fabricating the same
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Application No.: US16520305Application Date: 2019-07-23
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Publication No.: US10892341B2Publication Date: 2021-01-12
- Inventor: Hann-Jye Hsu , Cheng-Yuan Hsu
- Applicant: Powerchip Semiconductor Manufacturing Corporation
- Applicant Address: TW Hsinchu
- Assignee: Powerchip Semiconductor Manufacturing Corporation
- Current Assignee: Powerchip Semiconductor Manufacturing Corporation
- Current Assignee Address: TW Hsinchu
- Agent Winston Hsu
- Priority: TW108116696A 20190515
- Main IPC: H01L29/423
- IPC: H01L29/423 ; G11C16/26 ; H01L29/08 ; H01L23/528 ; G11C16/14 ; H01L29/788 ; H01L29/49 ; H01L29/66 ; H01L21/28 ; H01L21/3213 ; H01L21/311 ; H01L21/02 ; H01L21/265 ; G11C16/04 ; G11C16/10 ; H01L27/11524
Abstract:
A flash memory with assistant gates, including two floating gates disposed on a substrate, an insulating layer formed on the two floating gates and the substrate, an assistant gate disposed between the two floating gates, wherein a portion of the assistant gate wraps around the two floating gates, and two select gates disposed respectively outside the two floating gates and partially overlap the two floating gates.
Information query
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