Invention Grant
- Patent Title: FinFETs with deposited fin bodies
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Application No.: US16551495Application Date: 2019-08-26
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Publication No.: US10892349B2Publication Date: 2021-01-12
- Inventor: Werner Juengling
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/66 ; H01L27/108 ; H01L29/78 ; H01L29/04 ; H01L21/8234 ; H01L27/088
Abstract:
Electronic apparatus, systems, and methods in a variety of applications can include a fin field effect transistor (FinFET) having a deposited fin body. Such a FinFET can be implemented as an access transistor in a circuit of an integrated circuit. In an embodiment, an array of FinFETs having a deposited fin bodies can be disposed on digitlines. For the array of FinFETs having a deposited fin bodies structured in memory cells of a memory, the digitlines can be coupled to sense amplifiers. Additional apparatus, systems, and methods are disclosed.
Public/Granted literature
- US20200052097A1 FinFETs with Deposited Fin Bodies Public/Granted day:2020-02-13
Information query
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