Invention Grant
- Patent Title: Nanosheet transistor having abrupt junctions between the channel nanosheets and the source/drain extension regions
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Application No.: US16406390Application Date: 2019-05-08
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Publication No.: US10892368B2Publication Date: 2021-01-12
- Inventor: Choonghyun Lee , Kangguo Cheng , Juntao Li , Shogo Mochizuki
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Douglas Pearson
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/775 ; H01L29/161 ; H01L29/06 ; H01L29/66 ; H01L29/423
Abstract:
Embodiments of the invention are directed to a method that includes forming a nanosheet stack over a substrate. The nanosheet stack includes a first channel nanosheet having a first end region, a second end region, and a central region positioned between the first end region and the second end region. The first end region, the second end region, and the central region each includes a first type of semiconductor material, wherein, when the first type of semiconductor material is at a first temperature, the first type of semiconductor material has a first diffusion coefficient for a dopant. The central region is converted to a second type of semiconductor material, wherein, when the second type of semiconductor material is at the first temperature, the second type of semiconductor material has a second diffusion coefficient for the dopant.
Information query
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