Invention Grant
- Patent Title: Multivalent oxide cap for analog switching resistive memory
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Application No.: US15852290Application Date: 2017-12-22
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Publication No.: US10892408B2Publication Date: 2021-01-12
- Inventor: Takashi Ando , Marwan H. Khater , Seyoung Kim , Hiroyuki Miyazoe
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: McGinn IP Law Group, PLLC
- Agent Randall Bluestone, Esq.
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L27/24
Abstract:
A resistive random access memory (RRAM), including a first electrode, a base oxide being connected to the first electrode, and a multivalent oxide being connected to the base oxide layer. The multivalent oxide switches oxidative states.
Public/Granted literature
- US20180123034A1 MULTIVALENT OXIDE CAP FOR ANALOG SWITCHING RESISTIVE MEMORY Public/Granted day:2018-05-03
Information query
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