Invention Grant
- Patent Title: Vertical cavity light-emitting element
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Application No.: US16419873Application Date: 2019-05-22
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Publication No.: US10892601B2Publication Date: 2021-01-12
- Inventor: Masaru Kuramoto , Seiichiro Kobayashi , Tetsuya Takeuchi
- Applicant: STANLEY ELECTRIC CO., LTD. , MEIJO UNIVERSITY
- Applicant Address: JP Tokyo; JP Nagoya
- Assignee: STANLEY ELECTRIC CO., LTD.,MEIJO UNIVERSITY
- Current Assignee: STANLEY ELECTRIC CO., LTD.,MEIJO UNIVERSITY
- Current Assignee Address: JP Tokyo; JP Nagoya
- Agency: Holtz, Holtz & Volek PC
- Priority: JP2018-099677 20180524,JP2018-238075 20181220
- Main IPC: H01S5/183
- IPC: H01S5/183 ; H01S5/30 ; H01S5/343

Abstract:
A vertical cavity light-emitting element comprises a substrate, a first multilayer reflector formed on the substrate, a semiconductor structure layer formed on the first multilayer reflector and including a light emitting layer, a second multilayer reflector formed on the semiconductor structure layer and constituting a resonator together with the first multilayer reflector, and a light guide layer configured to form a light guide structure including a center region extending in a direction perpendicular to the upper surface of said substrate between the first and second multilayer reflectors and including a light emission center of the light-emitting layer and a peripheral region provided around the center region and having a smaller optical distance between the first and second multilayer reflectors than that in the center region. The second multilayer reflector has a flatness property over the center region and the peripheral region.
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