Invention Grant
- Patent Title: Highly linear transconductance amplifier and method thereof
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Application No.: US16292425Application Date: 2019-03-05
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Publication No.: US10892717B2Publication Date: 2021-01-12
- Inventor: Chia-Liang (Leon) Lin
- Applicant: Realtek Semiconductor Corp.
- Applicant Address: TW Hsinchu
- Assignee: Realtek Semiconductor Corp.
- Current Assignee: Realtek Semiconductor Corp.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H03F3/45
- IPC: H03F3/45 ; H03F1/32

Abstract:
A circuit includes a first common-source amplifier configured to receive a first voltage at a first gate node and output a first current to a first drain node in accordance with a first source voltage at a first source node; a second common-source amplifier configured to receive a second voltage at a second gate node and output a second current to a second drain node in accordance with a second source voltage at a second source node; a first diode-connected device configured to couple the first source node to a DC (direct current) node; a second diode-connected device configured to couple the second source node to the DC node; and a source-degenerating resistor inserted between the first source node and the second source node.
Public/Granted literature
- US20200287506A1 HIGHLY LINEAR TRANSCONDUCTANCE AMPLIFIER AND METHOD THEREOF Public/Granted day:2020-09-10
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