Invention Grant
- Patent Title: Integration-based low noise amplifiers for sensors
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Application No.: US16176242Application Date: 2018-10-31
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Publication No.: US10892723B2Publication Date: 2021-01-12
- Inventor: Johan Raman , Pieter Rombouts
- Applicant: Melexis Technologies SA
- Applicant Address: CH Bevaix
- Assignee: Melexis Technologies SA
- Current Assignee: Melexis Technologies SA
- Current Assignee Address: CH Bevaix
- Agency: Workman Nydegger
- Priority: GB1600774.2 20160115
- Main IPC: H03F3/45
- IPC: H03F3/45 ; H03F3/387

Abstract:
A semiconductor amplifier circuit comprising an input block adapted for receiving a voltage signal to be amplified, an integrator circuit having an integrating capacitor providing a continuous-time signal representative for the integral of the voltage signal, a first feedback path comprising: a sample-and-hold block and a first feedback block, the first feedback path providing a proportional feedback signal upstream of the current integrator. The amplification factor is larger than 1 for a predefined frequency range. Charge stored on the integrating capacitor at the beginning of a sample period is linearly removed during one single sampling period in such a way that the absolute value of the charge is smaller at the end of the sampling period than at the beginning of the sample period when the voltage signal to be amplified is equal to zero.
Public/Granted literature
- US20190068146A1 INTEGRATION-BASED LOW NOISE AMPLIFIERS FOR SENSORS Public/Granted day:2019-02-28
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