- Patent Title: Reverse body biasing of a transistor using a photovoltaic source
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Application No.: US16693672Application Date: 2019-11-25
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Publication No.: US10892757B1Publication Date: 2021-01-12
- Inventor: Filip Kaklin
- Applicant: STMicroelectronics (Research & Development) Limited
- Applicant Address: GB Marlow
- Assignee: STMicroelectronics (Research & Development) Limited
- Current Assignee: STMicroelectronics (Research & Development) Limited
- Current Assignee Address: GB Marlow
- Agency: Crowe & Dunlevy
- Main IPC: H03K19/00
- IPC: H03K19/00 ; H01L27/14 ; H03K19/003 ; H01L27/144 ; H01L27/16 ; H01L27/146 ; H01L31/02

Abstract:
A metal oxide semiconductor (MOS) transistor has a source terminal, a drain terminal, a gate terminal and a body terminal. The source terminal is connected to receive a supply voltage and the body terminal is connected to receive a reverse body bias voltage. A photovoltaic circuit has a first terminal connected to the source terminal of the MOS transistor and a second terminal connected to the body terminal of the MOS transistor. The photovoltaic circuit converts received photons from the environment to generate the reverse body bias voltage.
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