Invention Grant
- Patent Title: Ozone abatement method for semiconductor manufacturing system
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Application No.: US16443991Application Date: 2019-06-18
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Publication No.: US10894229B2Publication Date: 2021-01-19
- Inventor: Edward L. Pepe
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent L. Jeffrey Kelly
- Main IPC: B01D53/00
- IPC: B01D53/00 ; B01D53/66 ; F23G7/06

Abstract:
An apparatus and method for abating ozone and reducing sulfuric acid from an exhaust stream. In a semiconductor manufacturing plant the processing of wafers involves the cleaning and etching of wafers, the resultant processing may produce gasses which must be abated. The apparatus and method utilizes UV light in high doses to convert ozone (O3) to oxygen (O2). By ensuring laminar flow through the UV light chambers, the efficiency of the system is sufficient to allow for the remaining impurities in the exhaust air to be removed through the use of an RTO.
Public/Granted literature
- US20190299150A1 OZONE ABATEMENT SYSTEM FOR SEMICONDUCTOR MANUFACTURING SYSTEM Public/Granted day:2019-10-03
Information query
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