Invention Grant
- Patent Title: Oxide sintered material and method for manufacturing the same, sputtering target, and method for manufacturing semiconductor device
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Application No.: US16347152Application Date: 2017-06-26
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Publication No.: US10894744B2Publication Date: 2021-01-19
- Inventor: Miki Miyanaga , Kenichi Watatani , Hideaki Awata , Kazuya Tokuda , Aiko Tominaga
- Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Applicant Address: JP Osaka
- Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Current Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Current Assignee Address: JP Osaka
- Agency: Baker Botts L.L.P.
- Agent Michael A. Sartori
- Priority: JP2016-216263 20161104
- International Application: PCT/JP2017/023375 WO 20170626
- International Announcement: WO2018/083837 WO 20180511
- Main IPC: C04B35/01
- IPC: C04B35/01 ; C23C14/08 ; C23C14/34 ; H01L21/02 ; H01L29/786
Abstract:
Provided are: an oxide sintered material including an In2O3 crystal phase, a Zn4In2O7 crystal phase and a ZnWO4 crystal phase, wherein the roundness of crystal particles composed of the ZnWO4 crystal phase is 0.01 or more and less than 0.7; a method for producing the oxide sintered material; and a method for manufacturing a semiconductor device including an oxide semiconductor film that is formed by using the oxide sintered material as a sputter target.
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