Invention Grant
- Patent Title: Resistive memory device for matrix-vector multiplications
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Application No.: US16289754Application Date: 2019-03-01
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Publication No.: US10896242B2Publication Date: 2021-01-19
- Inventor: Riduan Khaddam-Aljameh , Abu Sebastian , Manuel Le Gallo-Bourdeau , Milos Stanisavljevic
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Harrington & Smith
- Main IPC: G06F17/16
- IPC: G06F17/16 ; G11C13/00 ; G06G7/161 ; G06G7/22

Abstract:
A device performs a matrix-vector multiplication of a matrix with a vector. The device includes a crossbar array having row lines, column lines and junctions arranged between the row lines and the column lines. Each junction includes a programmable resistive element and an access element for accessing the programmable resistive element. The device further includes a signal generator configured to apply programming signals to the resistive elements to program conductance values for the matrix-vector multiplication. The device further includes a readout circuit and control circuitry configured to control the signal generator and the readout circuit. The readout circuit is configured to apply read voltages having a positive voltage sign and negative read voltages having a negative voltage sign to the row lines of the crossbar array. The readout circuit is further configured to read out column currents of the plurality of column lines of the crossbar array.
Public/Granted literature
- US20200279012A1 Resistive Memory Device For Matrix-Vector Multiplications Public/Granted day:2020-09-03
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