A data write circuit of a resistive memory element is provided, the device being capable of writing with low writing energy using a simple circuit. The data write circuit of the resistive memory element, includes: a complementary resistive memory element; writing means for making the complementary resistive memory element cause a resistance change; detection means for detecting a writing state in the complementary resistive memory element; and control means for controlling writing by the writing means, based on a detected signal of the detection means.