Invention Grant
- Patent Title: Contact in RF-switch
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Application No.: US15771026Application Date: 2016-11-14
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Publication No.: US10896787B2Publication Date: 2021-01-19
- Inventor: Robertus Petrus Van Kampen , James Douglas Huffman , Mickael Renault , Shibajyoti Ghosh Dastider , Jacques Marcel Muyango
- Applicant: CAVENDISH KINETICS, INC.
- Applicant Address: US CA San Jose
- Assignee: CAVENDISH KINETICS, INC.
- Current Assignee: CAVENDISH KINETICS, INC.
- Current Assignee Address: US CA San Jose
- Agency: Withrow & Terranova, P.L.L.C.
- International Application: PCT/US2016/061934 WO 20161114
- International Announcement: WO2017/087339 WO 20170526
- Main IPC: H01H1/00
- IPC: H01H1/00 ; B81B3/00 ; H01H59/00 ; B81C1/00
Abstract:
The present invention generally relates to a mechanism for making a MEMS switch that has a robust RF-contact by avoiding currents to run through a thin sidewall in a via from the RF-contact to the underlying RF-electrode.
Public/Granted literature
- US20180308645A1 IMPROVED CONTACT IN RF-SWITCH Public/Granted day:2018-10-25
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