Invention Grant
- Patent Title: Laser irradiation apparatus, thin film transistor, and method of manufacturing thin film transistor
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Application No.: US16410348Application Date: 2019-05-13
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Publication No.: US10896817B2Publication Date: 2021-01-19
- Inventor: Michinobu Mizumura , Nobutake Nodera , Yoshiaki Matsushima , Masakazu Tanaka , Takao Matsumoto
- Applicant: V Technology Co., Ltd. , Sakai Display Products Corporation
- Applicant Address: JP Yokohama; JP Sakai
- Assignee: V Technology Co., Ltd.,Sakai Display Products Corporation
- Current Assignee: V Technology Co., Ltd.,Sakai Display Products Corporation
- Current Assignee Address: JP Yokohama; JP Sakai
- Agency: DLA Piper LLP (US)
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/02 ; H01L21/20 ; H01L21/268 ; H01L21/67 ; H01L29/786

Abstract:
A laser irradiation apparatus includes a light source that generates a laser beam, a projection lens that radiates the laser beam onto a predetermined region of an amorphous silicon thin film deposited on each of a plurality of thin film transistors on a glass substrate, and a projection mask pattern provided on the projection lens and has a plurality of openings so that the laser beam is radiated onto each of the plurality of thin film transistors, wherein the projection lens radiates the laser beam onto the plurality of thin film transistors on the glass substrate, which moves in a predetermined direction, through the projection mask pattern, and the projection mask pattern is provided such that the openings are not continuous in one column orthogonal to the moving direction.
Public/Granted literature
- US20190267235A1 LASER IRRADIATION APPARATUS, THIN FILM TRANSISTOR, AND METHOD OF MANUFACTURING THIN FILM TRANSISTOR Public/Granted day:2019-08-29
Information query
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