Invention Grant
- Patent Title: Massive deep trench capacitor die fill for high performance application specific integrated circuit (ASIC) applications
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Application No.: US16358197Application Date: 2019-03-19
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Publication No.: US10896873B2Publication Date: 2021-01-19
- Inventor: Woon Seong Kwon , Nam Hoon Kim , Teckgyu Kang
- Applicant: Google LLC
- Applicant Address: US CA Mountain View
- Assignee: Google LLC
- Current Assignee: Google LLC
- Current Assignee Address: US CA Mountain View
- Agency: Lerner, David, Littenberg, Krumholz & Mentlik, LLP
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L49/02

Abstract:
A processor assembly and a system including a processor assembly are disclosed. The processor assembly includes an interposer disposed on a substrate, an integrated circuit disposed on the interposer, a memory circuit disposed on the interposer and coupled to the integrated circuit, and a capacitor embedded in the interposer. The capacitor includes at least a first non-planar conductor structure and a second non-planar conductor structure separated by a non-planar dielectric structure. The capacitor includes a first capacitor terminal electrically coupling the first non-planar conductor structure to a first voltage terminal in the integrated circuit. The capacitor includes a second capacitor terminal electrically coupling the second non-planar conductor structure to a second voltage terminal in the integrated circuit. The capacitor includes an oxide layer electrically isolating the capacitor from the interposer.
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Information query
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