Invention Grant
- Patent Title: Semiconductor device
-
Application No.: US16653164Application Date: 2019-10-15
-
Publication No.: US10896876B2Publication Date: 2021-01-19
- Inventor: Tomoyuki Tanaka , Takahiro Nakamura
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2018-227244 20181204
- Main IPC: H03F3/45
- IPC: H03F3/45 ; H01L23/528 ; H03G3/30

Abstract:
In a semiconductor device having a variable gain amplifier, a setting error of a gain associated with a crosstalk noise is reduced. A switch block included in the variable gain amplifier includes a plurality of switch transistors Mp1, Mp2, MN1, and Mn2, and can variably set the parallel number of the switches used for coupling by selecting a forward coupling state for coupling the common wirings CSP, CSN to output wirings OUTP, OUTN, respectively, or a cross coupling state for coupling to OUTN, OUTP, respectively. Output wirings OUTN, OUTP form an output wiring pair by extending in a X direction while crossing each other through an underlying wiring layer ML[x-1]. At least one of the common wirings CSP, CSN is located next to the output wiring pair in a Y direction.
Public/Granted literature
- US20200176374A1 SEMICONDUCTOR DEVICE Public/Granted day:2020-06-04
Information query