Invention Grant
- Patent Title: Semiconductor device
-
Application No.: US16354894Application Date: 2019-03-15
-
Publication No.: US10896891B2Publication Date: 2021-01-19
- Inventor: Yu Suzuki , Shoko Kikuchi , Merii Inaba , Jun Murakami , Takashi Shigeoka , Hiroshi Inagaki , Takashi Okuhata
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Minato-ku
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2018-168455 20180910
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L25/18

Abstract:
A semiconductor device includes: a semiconductor substrate; a plurality of first pad electrodes provided above the semiconductor substrate; a plurality of first wires electrically connected to the plurality of first pad electrodes respectively; a first electrode commonly connected to the plurality of first wires; a second pad electrode provided above the semiconductor substrate; and a first resistance portion and a first protective element that are connected in series between the first electrode and the second pad electrode.
Public/Granted literature
- US20200083192A1 SEMICONDUCTOR DEVICE Public/Granted day:2020-03-12
Information query
IPC分类: