Invention Grant
- Patent Title: Self-aligned contact for vertical field effect transistor
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Application No.: US16655589Application Date: 2019-10-17
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Publication No.: US10896972B2Publication Date: 2021-01-19
- Inventor: Brent A. Anderson , Steven Bentley , Su Chen Fan , Balasubramanian Pranatharthiharan , Junli Wang , Ruilong Xie
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Joseph Petrokaitis
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/417 ; H01L29/08 ; H01L29/10

Abstract:
Embodiments of the invention are directed to a method and resulting structures for a semiconductor device having self-aligned contacts. In a non-limiting embodiment of the invention, a semiconductor fin is formed vertically extending from a bottom source/drain region of a substrate. A conductive gate is formed over a channel region of the semiconductor fin. A top source/drain region is formed on a surface of the semiconductor fin and a top metallization layer is formed on the top source/drain region. A dielectric cap is formed over the top metallization layer.
Public/Granted literature
- US20200052096A1 SELF-ALIGNED CONTACT FOR VERTICAL FIELD EFFECT TRANSISTOR Public/Granted day:2020-02-13
Information query
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