Invention Grant
- Patent Title: Magnetic memory device
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Application No.: US16697276Application Date: 2019-11-27
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Publication No.: US10897007B2Publication Date: 2021-01-19
- Inventor: Soichi Oikawa , Yushi Kato , Hiroaki Yoda
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2018-222119 20181128
- Main IPC: G11C11/16
- IPC: G11C11/16 ; H01L43/02 ; H01L27/22 ; H01L43/10 ; H01F10/32

Abstract:
According to one embodiment, a magnetic memory device includes a first magnetic region, a first counter magnetic region, and a first nonmagnetic region provided between the first magnetic region and the first counter magnetic region. The first magnetic region includes a first magnetic film, a second magnetic film, and an intermediate film. The first magnetic film is provided between the second magnetic film and the first nonmagnetic region. The intermediate film includes Ru and is provided between the first magnetic film and the second magnetic film. A distance along a first direction between the first magnetic film and the second magnetic film is not less than 1.8 nm and not more than 2.2 nm. The first direction is from the first counter magnetic region toward the first magnetic region.
Public/Granted literature
- US20200168790A1 MAGNETIC MEMORY DEVICE Public/Granted day:2020-05-28
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