Invention Grant
- Patent Title: Power factor improvement circuit and semiconductor apparatus
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Application No.: US16807099Application Date: 2020-03-02
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Publication No.: US10897194B2Publication Date: 2021-01-19
- Inventor: Nobuyuki Masuda , Takato Sugawara
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki
- Agency: Rabin & Berdo, P.C.
- Priority: JP2018-068910 20180330
- Main IPC: H02M1/42
- IPC: H02M1/42 ; H02M3/156 ; H02M1/00

Abstract:
A power factor improvement circuit that performs, on the basis of an output voltage when a switching power-supply apparatus is in a light-load state or a no-load state, a burst operation for switching between states of the switching operation of a switching element includes: a first circuit that outputs a first voltage that corresponds to the error between a reference voltage and a voltage obtained by dividing the output voltage; and a clamp circuit that, while the burst operation is performed, clamps the lower limit of the first voltage, which decreases when the switching operation of the switching element is disabled, at a lower-limit voltage higher than the ground voltage of the power factor improvement circuit and clamps the upper limit of the first voltage, which increases when the switching operation of the switching element is performed, at an upper-limit voltage.
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