Invention Grant
- Patent Title: Power amplifier and temperature compensation method for the power amplifier
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Application No.: US16575513Application Date: 2019-09-19
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Publication No.: US10901447B2Publication Date: 2021-01-26
- Inventor: Hwey-Ching Chien
- Applicant: RICHWAVE TECHNOLOGY CORP.
- Applicant Address: TW Taipei
- Assignee: RICHWAVE TECHNOLOGY CORP.
- Current Assignee: RICHWAVE TECHNOLOGY CORP.
- Current Assignee Address: TW Taipei
- Agent Winston Hsu
- Priority: TW108114104A 20190423
- Main IPC: G05F3/24
- IPC: G05F3/24 ; G05F3/26 ; G05F3/22

Abstract:
A power amplifier configured to amplify a received input signal, and the power amplifier includes a bias circuit and an output stage circuit. The bias circuit includes a reference voltage circuit and a bias generating circuit. The reference voltage circuit receives the first system voltage and provides a reference voltage according to a first system voltage, and the reference voltage changes as the temperature of the wafer changes. The bias generating circuit receives the second system voltage and the reference voltage, and generates an operating voltage. The output stage circuit is coupled to the bias circuit to receive the operating voltage and the driving current to receive and amplify the input signal. When a chip temperature is changed, the bias generating circuit changes the operating voltage according to the reference voltage, such that the driving current approaches a predetermined value as the chip temperature rises.
Public/Granted literature
- US20200341501A1 POWER AMPLIFIER AND TEMPERATURE COMPENSATION METHOD FOR THE POWER AMPLIFIER Public/Granted day:2020-10-29
Information query
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