Invention Grant
- Patent Title: Programmable resistive memory element and a method of making the same
-
Application No.: US16431290Application Date: 2019-06-04
-
Publication No.: US10902914B2Publication Date: 2021-01-26
- Inventor: Viorel-Georgel Dumitru , Cristina Besleaga Stan , Alin Velea , Aurelian-Catalin Galca
- Applicant: CYBERSWARM, INC.
- Applicant Address: US CA San Mateo
- Assignee: CYBERSWARM, INC.
- Current Assignee: CYBERSWARM, INC.
- Current Assignee Address: US CA San Mateo
- Agency: DLA Piper LLP (US)
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00 ; G11C11/56

Abstract:
A programmable resistive memory element and a method of adjusting a resistance of a programmable resistive memory element are provided. The programmable resistive memory element includes at least one resistive memory element. Each resistive memory element includes an Indium-Gallium-Zinc-Oxide (IGZO) resistive layer, a first electrical contact and a second electrical contact. The first and second electrical contacts are disposed on the IGZO resistive layer in the same plane. The programmable resistive memory element includes a voltage generator coupled to the first and second electrical contacts, constructed and arranged to apply a thermal treatment to the resistive memory element to adjust a resistance of the resistive memory element.
Information query