A method includes providing a semiconductor base substrate having a substantially planar growth surface and one or more preferred crystallographic cleavage planes and an epitaxial first type III-V semiconductor layer on the planar growth surface. A first trench that vertically extends from an upper surface of the first type III-V semiconductor layer is formed at least to the planar growth surface. The first trench has a first trench length direction that is antiparallel to the one or more preferred crystallographic cleavage planes.