Invention Grant
- Patent Title: Semiconductor apparatus and manufacturing method of semiconductor apparatus
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Application No.: US15690278Application Date: 2017-08-30
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Publication No.: US10903130B2Publication Date: 2021-01-26
- Inventor: Yoko Nakamura , Norihiro Nashida , Yuichiro Hinata
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kanagawa
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kanagawa
- Priority: JP2016-205901 20161020
- Main IPC: H01L23/31
- IPC: H01L23/31 ; H01L23/538 ; H01L23/16 ; H01L21/56 ; H01L23/373 ; H01L23/498 ; H01L25/07 ; H01L25/00 ; H01L25/16 ; H01L25/18 ; H01L23/24 ; H01L23/00 ; H01L21/48 ; H01L23/053 ; H01L23/10

Abstract:
A semiconductor apparatus 1 includes a circuit substrate 3 having a circuit pattern layer 3c on an upper principal surface, semiconductor elements 4a and 4b mounted on the circuit pattern layer 3c of the circuit substrate 3, a printed substrate 6 arranged apart from the circuit substrate 3 on the upper principal surface side of the circuit substrate 3, a housing 2 mold-sealing the upper principal surface side of the circuit substrate 3, and a block 10 provided sandwiching at least part of the housing 2 and being opposite to the circuit substrate 3, the block having a linear expansion coefficient smaller than that of the housing 2.
Public/Granted literature
- US20180114735A1 SEMICONDUCTOR APPARATUS AND MANUFACTURING METHOD OF SEMICONDUCTOR APPARATUS Public/Granted day:2018-04-26
Information query
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