Invention Grant
- Patent Title: Ferroelectric semiconductor device
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Application No.: US16231255Application Date: 2018-12-21
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Publication No.: US10903363B2Publication Date: 2021-01-26
- Inventor: Hyangkeun Yoo , Yong Soo Choi
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si
- Priority: KR10-2018-0072331 20180622
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/51 ; H01L27/1159 ; G11C11/22 ; H01L29/66 ; H01L21/02 ; H01L21/28
Abstract:
A ferroelectric semiconductor device of the present disclosure includes a substrate, a ferroelectric layer disposed on the substrate, an electric field control layer that is disposed on the ferroelectric layer and has a predetermined internal electric field formed without the application of an external electric power to alter the magnitude of a coercive electric field of the ferroelectric layer, and a gate electrode layer disposed on the electric field control layer.
Public/Granted literature
- US20190393355A1 FERROELECTRIC SEMICONDUCTOR DEVICE Public/Granted day:2019-12-26
Information query
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