Invention Grant
- Patent Title: Method of manufacturing semiconductor device
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Application No.: US16559087Application Date: 2019-09-03
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Publication No.: US10908506B2Publication Date: 2021-02-02
- Inventor: Jang-sun Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2019-0007579 20190121
- Main IPC: G03B27/54
- IPC: G03B27/54 ; G03F7/20 ; H01L21/67 ; G03F9/00

Abstract:
A method of manufacturing a semiconductor device includes: providing a first photoresist pattern on a wafer; measuring an overlay of the first photoresist pattern; generating a first overlay model function by a first overlay regression analysis of the measured overlay; and generating a second overlay model function by a second overlay regression analysis of a difference between the measured overlay and the first overlay model function.
Public/Granted literature
- US20200233312A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2020-07-23
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