Invention Grant
- Patent Title: Methods and apparatus for power management of a memory cell
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Application No.: US16717516Application Date: 2019-12-17
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Publication No.: US10908669B2Publication Date: 2021-02-02
- Inventor: Kenichi Kiyozaki
- Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Applicant Address: US AZ Phoenix
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Phoenix
- Agency: The Noblitt Group, PLLC
- Agent Hettie L. Haines
- Main IPC: G06F1/324
- IPC: G06F1/324 ; G06F1/3296 ; G06F1/3234 ; G11C11/417 ; G11C5/14

Abstract:
Various embodiments of the present technology may comprise a method and apparatus for power management of a memory cell. The memory cell may be configured to operate at various voltage levels to mitigate power dissipation. The memory cell may receive a first voltage level during an active state and receive a second voltage level during an idle state. The active and idle states may be known based on predetermined system parameters. The second voltage level may be selected according to the particular characteristics of the memory cell in order to retain input data.
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