Invention Grant
- Patent Title: Storage device including write buffer memory and method of operating storage device
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Application No.: US16422599Application Date: 2019-05-24
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Publication No.: US10908842B2Publication Date: 2021-02-02
- Inventor: Eun Chu Oh , Younggeun Lee , Youngjin Cho , Jin-Hyeok Choi
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Myers Bigel, P.A.
- Priority: KR10-2018-0061134 20180529
- Main IPC: G06F3/06
- IPC: G06F3/06 ; G11C11/56 ; G06F11/10 ; G11C29/52 ; G11C13/00 ; G11C16/04 ; H03M13/29

Abstract:
A storage device includes a nonvolatile memory including a plurality of nonvolatile memory cells, a write buffer memory storing first data and second data received from a host, and a storage controller storing the first data and the second data that are stored in the write buffer memory into the nonvolatile memory. The storage controller performs a first program operation and a second program operation on a plurality of first memory cells connected to a first word line group to store the first data, and performs a first program operation and a second program operation on a plurality of second memory cells connected to a second word line group to store the second data. While the storage controller performs the first program operation on the plurality of second memory cells, the first data is written in the write buffer memory.
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