Invention Grant
- Patent Title: ReRAM memory cell having dual word line control
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Application No.: US16405895Application Date: 2019-05-07
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Publication No.: US10910050B2Publication Date: 2021-02-02
- Inventor: Victor Nguyen , Fethi Dhaoui , John L. McCollum , Fengliang Xue
- Applicant: Microchip Technology Inc.
- Applicant Address: US AZ Chandler
- Assignee: Microchip Technology Inc.
- Current Assignee: Microchip Technology Inc.
- Current Assignee Address: US AZ Chandler
- Agency: Glass and Associates
- Agent Kenneth Glass; Kenneth D'Alessandro
- Main IPC: G11C13/00
- IPC: G11C13/00 ; H01L45/00
Abstract:
A ReRAM memory cell includes a ReRAM device including a solid electrolyte layer disposed between a first ion-source electrode and a second electrode and a select circuit including two series-connected select transistors connected in series with the ReRAM device, each of the two series-connected select transistors having a gate connected to a separate control line.
Public/Granted literature
- US20200327937A1 ReRAM MEMORY CELL HAVING DUAL WORD LINE CONTROL Public/Granted day:2020-10-15
Information query
