Invention Grant
- Patent Title: Charge separation for memory sensing
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Application No.: US16558683Application Date: 2019-09-03
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Publication No.: US10910054B2Publication Date: 2021-02-02
- Inventor: Umberto Di Vincenzo , Riccardo Muzzetto , Ferdinando Bedeschi
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: G11C11/22
- IPC: G11C11/22 ; G11C14/00

Abstract:
The present provision includes apparatuses, methods, and systems for charge separation for memory sensing. An embodiment includes applying a sensing voltage to a memory cell, and determining a data state of the memory cell based, at least in part, on a comparison of an amount of charge discharged by the memory cell while the sensing voltage is being applied to the memory cell before a particular reference time and an amount of charge discharged by the memory cell while the sensing voltage is being applied to the memory cell after the particular reference time.
Public/Granted literature
- US20200005868A1 CHARGE SEPARATION FOR MEMORY SENSING Public/Granted day:2020-01-02
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